CSD18532Q5BT
- Mfr.Part #
- CSD18532Q5BT
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 100A 8VSON
- Stock
- 309,923
- In Stock :
- 309,923
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 100A Ta
- Terminal Form :
- NO LEAD
- Width :
- 6mm
- Lead Free :
- Contains Lead
- Length :
- 5mm
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 3.2W Ta 156W Tc
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Peak Reflow Temperature (Cel) :
- 260
- Series :
- NexFET™
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Factory Lead Time :
- 6 Weeks
- Number of Pins :
- 8
- Drain-source On Resistance-Max :
- 0.0043Ohm
- Contact Plating :
- Tin
- Turn-Off Delay Time :
- 22 ns
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±20V
- Base Part Number :
- CSD18532
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Drain to Source Voltage (Vdss) :
- 60V
- Number of Terminations :
- 5
- ECCN Code :
- EAR99
- Pulsed Drain Current-Max (IDM) :
- 400A
- Element Configuration :
- Single
- Feedback Cap-Max (Crss) :
- 17 pF
- Drain Current-Max (Abs) (ID) :
- 23A
- Input Capacitance (Ciss) (Max) @ Vds :
- 5070pF @ 30V
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Continuous Drain Current (ID) :
- 100A
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Avalanche Energy Rating (Eas) :
- 320 mJ
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 3.1 ns
- Package / Case :
- 8-PowerTDFN
- Thickness :
- 950μm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 58nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Case Connection :
- DRAIN
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 7.2ns
- Terminal Position :
- Dual
- DS Breakdown Voltage-Min :
- 60V
- Reach Compliance Code :
- not_compliant
- Rds On (Max) @ Id, Vgs :
- 3.2m Ω @ 25A, 10V
- Turn On Delay Time :
- 5.8 ns
- Datasheets
- CSD18532Q5BT

N-Channel Tape & Reel (TR) 3.2m Ω @ 25A, 10V ±20V 5070pF @ 30V 58nC @ 10V 60V 8-PowerTDFN
CSD18532Q5BT is an N-channel MOSFET in VSON-CLIP-8 package. This 2.5-mΩ, 60-V SON 5-mm × 6-mm NexFET? power MOSFET is designed to minimize losses in power conversion applications. This device can be applied in DC-DC Conversion and Motor Control due to the following features. And its ideal operating temperature is between -55 and +150℃.
CSD18532Q5BT Features
? Ultra-Low Qg and Qgd
? Low-Thermal Resistance
? Avalanche Rated
? Logic Level
? Lead-Free Terminal Plating
? RoHS Compliant
? Halogen Free
? SON 5-mm × 6-mm Plastic Package
CSD18532Q5BT Applications
? DC-DC Conversion
? Secondary Side Synchronous Rectifier
? Isolated Converter Primary Side Switch
? Motor Control
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