CSD18532NQ5B

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

5340pF @ 30V

JESD-609 Code :

e3

Width :

6mm

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.0044Ohm

Contact Plating :

Tin

Avalanche Energy Rating (Eas) :

360 mJ

Vgs(th) (Max) @ Id :

3.4V @ 250μA

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Number of Terminations :

5

Number of Pins :

8

Series :

NexFET™

Current - Continuous Drain (Id) @ 25°C :

22A Ta 100A Tc

Gate to Source Voltage (Vgs) :

20V

Base Part Number :

CSD18532

FET Type :

N-Channel

Fall Time (Typ) :

2.7 ns

Turn-Off Delay Time :

20 ns

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Thickness :

950μm

Power Dissipation-Max :

3.2W Ta

Rise Time :

8.7ns

Power Dissipation :

3.2W

Additional Feature :

AVALANCHE RATED

Pbfree Code :

yes

Vgs (Max) :

±20V

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

3.4m Ω @ 25A, 10V

Transistor Element Material :

SILICON

Turn On Delay Time :

8.2 ns

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Radiation Hardening :

No

Mounting Type :

Surface Mount

Package / Case :

8-PowerTDFN

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Case Connection :

DRAIN

Factory Lead Time :

6 Weeks

Continuous Drain Current (ID) :

100A

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

22A

Number of Elements :

1

ECCN Code :

EAR99

Length :

5mm

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Lead Free :

Contains Lead