CSD18531Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Contact Plating :

Tin

Mount :

Surface Mount

Length :

4.9mm

Power Dissipation :

156W

Base Part Number :

CSD18531

Nominal Vgs :

1.8 V

Height :

1.1mm

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 22A, 10V

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

224 mJ

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

60V

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Fall Time (Typ) :

2.7 ns

Mounting Type :

Surface Mount

Terminal Position :

Dual

Rise Time :

7.8ns

Number of Pins :

8

Element Configuration :

Single

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Cut Tape (CT)

Continuous Drain Current (ID) :

100A

Turn-Off Delay Time :

20 ns

Current - Continuous Drain (Id) @ 25°C :

19A Ta 100A Tc

ECCN Code :

EAR99

Factory Lead Time :

16 Weeks

Pbfree Code :

yes

Number of Terminations :

5

Package / Case :

8-PowerTDFN

Peak Reflow Temperature (Cel) :

260

Threshold Voltage :

1.8V

Max Junction Temperature (Tj) :

175°C

Series :

NexFET™

Turn On Delay Time :

4.4 ns

Input Capacitance (Ciss) (Max) @ Vds :

3840pF @ 30V

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 10 hours ago)

Gate to Source Voltage (Vgs) :

20V

Width :

6mm

Power Dissipation-Max :

3.1W Ta 156W Tc

Thickness :

1mm

Case Connection :

DRAIN

Transistor Application :

SWITCHING