CSD18514Q5A
- Mfr.Part #
- CSD18514Q5A
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 89A 8VSON
- Stock
- 3,269
- In Stock :
- 3,269
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Surface Mount :
- yes
- Base Part Number :
- CSD18514
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 40V
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Length :
- 4.9mm
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- 8-PowerTDFN
- Transistor Element Material :
- SILICON
- Case Connection :
- DRAIN
- Drain-source On Resistance-Max :
- 0.0079Ohm
- Reach Compliance Code :
- not_compliant
- Vgs (Max) :
- ±20V
- Series :
- NexFET™
- Rds On (Max) @ Id, Vgs :
- 7.9m Ω @ 15A, 10V
- Thickness :
- 1mm
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 8
- Number of Terminations :
- 5
- Factory Lead Time :
- 16 Weeks
- Avalanche Energy Rating (Eas) :
- 55 mJ
- Vgs(th) (Max) @ Id :
- 2.4V @ 250μA
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- NO LEAD
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 237A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Element Configuration :
- Single
- DS Breakdown Voltage-Min :
- 40V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Power Dissipation-Max :
- 74W Tc
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Width :
- 6mm
- JESD-609 Code :
- e3
- Additional Feature :
- AVALANCHE RATED
- Current - Continuous Drain (Id) @ 25°C :
- 89A Tc
- Terminal Position :
- Dual
- Terminal Finish :
- Matte Tin (Sn)
- Datasheets
- CSD18514Q5A

N-Channel Tape & Reel (TR) 7.9m Ω @ 15A, 10V ±20V 40nC @ 10V 40V 8-PowerTDFN
CSD18514Q5A MOSFET Description
The CSD18514Q5A NexFETTM power MOSFET is optimized for power conversion applications. It's housed in the SON5x6 package and has a Drain-Source voltage (VDS) of 40 V and a Gain-Source voltage (VGS) of 20 V. It's characterized to have very low on-resistance which is only 4.9 mOhms maximum when VGS is at 10 V. This device is lead-free and Halogen-free and has a low thermal resistance.
CSD18514Q5A MOSFET Features
Low RDS(ON)
Low-Thermal Resistance
Avalanche Rated
Logic Level
Lead-Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm × 6-mm Plastic Package
CSD18514Q5A MOSFET Applications
DC-DC Conversion
Secondary Side Synchronous
Battery Motor Control
General Power Conversion
Circuit Protection
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