CSD18512Q5B

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

7120pF @ 20V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Length :

5mm

Power Dissipation-Max :

139W Tc

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.0023Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

400A

Transistor Application :

SWITCHING

Package / Case :

8-PowerTDFN

Vgs (Max) :

±20V

Series :

NexFET™

Base Part Number :

CSD18512

Number of Terminations :

5

Avalanche Energy Rating (Eas) :

205 mJ

Drain to Source Voltage (Vdss) :

40V

Number of Elements :

1

Factory Lead Time :

6 Weeks

Thickness :

950μm

Surface Mount :

yes

Number of Pins :

8

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

AVALANCHE RATED

Terminal Form :

NO LEAD

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Width :

6mm

Element Configuration :

Single

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

DS Breakdown Voltage-Min :

40V

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 30A, 10V

Drain Current-Max (Abs) (ID) :

32A

Feedback Cap-Max (Crss) :

333 pF

Current - Continuous Drain (Id) @ 25°C :

211A Tc

Pbfree Code :

yes

JESD-609 Code :

e4

FET Type :

N-Channel