CSD18511Q5AT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Length :

4.9mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

DS Breakdown Voltage-Min :

40V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 24A, 4.5V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Number of Elements :

1

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2.45V @ 250μA

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

6 Weeks

Thickness :

1mm

Additional Feature :

AVALANCHE RATED

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

159A Tc

Mounting Type :

Surface Mount

Power Dissipation-Max :

104W Tc

Avalanche Energy Rating (Eas) :

157 mJ

Drain-source On Resistance-Max :

0.0035Ohm

Drain Current-Max (Abs) (ID) :

27A

Base Part Number :

CSD18511

JESD-609 Code :

e3

Terminal Form :

NO LEAD

Vgs (Max) :

±20V

FET Type :

N-Channel

Number of Terminations :

5

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Feedback Cap-Max (Crss) :

309 pF

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

5850pF @ 10V

Series :

NexFET™

Package / Case :

8-PowerTDFN

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

400A

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Drain to Source Voltage (Vdss) :

40V

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

Pbfree Code :

yes

Width :

6mm

Terminal Position :

Dual