CSD18511KTTT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Thickness :

4.44mm

Drain-source On Resistance-Max :

0.0042Ohm

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

110A Ta 194A Tc

Length :

10.18mm

Terminal Finish :

Matte Tin (Sn)

Additional Feature :

AVALANCHE RATED

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

40V

Series :

NexFET™

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 100A, 10V

Drain Current-Max (Abs) (ID) :

110A

Avalanche Energy Rating (Eas) :

156 mJ

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

400A

Number of Terminations :

2

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Reach Compliance Code :

not_compliant

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

12 Weeks

Mounting Type :

Surface Mount

Base Part Number :

CSD18511

Power Dissipation-Max :

188W Ta

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Width :

8.41mm

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Height :

4.83mm

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

DS Breakdown Voltage-Min :

40V

Moisture Sensitivity Level (MSL) :

2 (1 Year)

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

5940pF @ 20V

Number of Pins :

3

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING