CSD18511KTT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Pulsed Drain Current-Max (IDM) :

400A

Drain to Source Voltage (Vdss) :

40V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

DS Breakdown Voltage-Min :

40V

Height :

4.83mm

Additional Feature :

AVALANCHE RATED

Number of Elements :

1

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

194A Ta

Element Configuration :

Single

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

5940pF @ 20V

Transistor Application :

SWITCHING

Pbfree Code :

yes

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 100A, 10V

FET Type :

N-Channel

Number of Pins :

3

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Power Dissipation-Max :

188W Ta

Operating Temperature :

-55°C~175°C TJ

Thickness :

4.44mm

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Reach Compliance Code :

not_compliant

Width :

8.41mm

Mounting Type :

Surface Mount

Base Part Number :

CSD18511

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.0042Ohm

Length :

10.18mm

Surface Mount :

yes

Series :

NexFET™

Drain Current-Max (Abs) (ID) :

110A

Avalanche Energy Rating (Eas) :

156 mJ

Factory Lead Time :

12 Weeks