CSD18511KCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Pbfree Code :

yes

Element Configuration :

Single

Base Part Number :

CSD18511

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

5940pF @ 20V

Drain to Source Voltage (Vdss) :

40V

Drain-source On Resistance-Max :

0.0042Ohm

Additional Feature :

AVALANCHE RATED

Avalanche Energy Rating (Eas) :

156 mJ

Thickness :

4.58mm

Pulsed Drain Current-Max (IDM) :

400A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

194A Ta

Reach Compliance Code :

not_compliant

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~175°C TJ

Length :

10.16mm

Number of Pins :

3

Power Dissipation-Max :

188W Ta

Package / Case :

TO-220-3

Case Connection :

DRAIN

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

110A

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 100A, 10V

Surface Mount :

No

JEDEC-95 Code :

TO-220AB

Factory Lead Time :

6 Weeks

Number of Terminations :

3

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Mounting Type :

Through Hole

Packaging :

Tube

Number of Elements :

1

Height :

4.7mm

Vgs (Max) :

±20V

Series :

NexFET™

RoHS Status :

ROHS3 Compliant

Width :

8.7mm

DS Breakdown Voltage-Min :

40V

Transistor Element Material :

SILICON