CSD18510Q5BT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Base Part Number :

CSD18510

Drain-source On Resistance-Max :

0.0016Ohm

JESD-609 Code :

e4

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

11400pF @ 20V

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

40V

Reach Compliance Code :

not_compliant

Power Dissipation-Max :

156W Tc

Drain to Source Voltage (Vdss) :

40V

Pbfree Code :

yes

Surface Mount :

yes

Vgs (Max) :

±20V

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

153nC @ 10V

Terminal Form :

NO LEAD

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

5mm

Number of Pins :

8

Series :

NexFET™

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Thickness :

950μm

Case Connection :

DRAIN

Feedback Cap-Max (Crss) :

551 pF

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

300A Tc

Additional Feature :

AVALANCHE RATED

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

42A

Number of Terminations :

5

Pulsed Drain Current-Max (IDM) :

400A

Width :

6mm

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Package / Case :

8-PowerTDFN

Rds On (Max) @ Id, Vgs :

0.96m Ω @ 32A, 10V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)