CSD18510Q5B

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain Current-Max (Abs) (ID) :

42A

Terminal Position :

Dual

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Pulsed Drain Current-Max (IDM) :

400A

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

156W Tc

Reach Compliance Code :

not_compliant

Base Part Number :

CSD18510

Current - Continuous Drain (Id) @ 25°C :

300A Tc

Number of Terminations :

5

Case Connection :

DRAIN

FET Type :

N-Channel

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Width :

6mm

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Thickness :

950μm

Additional Feature :

AVALANCHE RATED

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

11400pF @ 20V

Terminal Form :

NO LEAD

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-PowerTDFN

Drain-source On Resistance-Max :

0.0016Ohm

JESD-609 Code :

e4

Factory Lead Time :

6 Weeks

Rds On (Max) @ Id, Vgs :

0.96m Ω @ 32A, 10V

Series :

NexFET™

DS Breakdown Voltage-Min :

40V

Surface Mount :

yes

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

40V

Feedback Cap-Max (Crss) :

551 pF

Element Configuration :

Single

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Gate Charge (Qg) (Max) @ Vgs :

153nC @ 10V

Pbfree Code :

yes

Length :

5mm