CSD18510KTT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 100A, 10V

Vgs (Max) :

±20V

Number of Elements :

1

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Power Dissipation-Max :

250W Ta

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Operating Temperature :

-55°C~175°C TJ

Thickness :

4.44mm

Additional Feature :

AVALANCHE RATED

Case Connection :

DRAIN

Package / Case :

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

40V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.0026Ohm

FET Type :

N-Channel

Terminal Form :

Gull wing

Length :

10.18mm

Current - Continuous Drain (Id) @ 25°C :

274A Tc

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

11400pF @ 20V

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

200A

Series :

NexFET™

DS Breakdown Voltage-Min :

40V

Feedback Cap-Max (Crss) :

551 pF

Base Part Number :

CSD18510

Reach Compliance Code :

not_compliant

Height :

4.83mm

Number of Terminations :

2

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

153nC @ 10V

Factory Lead Time :

12 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

400A

Terminal Finish :

Matte Tin (Sn)

Width :

8.41mm