CSD18510KCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

400A

Series :

NexFET™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Drain to Source Voltage (Vdss) :

40V

Transistor Element Material :

SILICON

Factory Lead Time :

6 Weeks

Drain Current-Max (Abs) (ID) :

200A

Operating Mode :

ENHANCEMENT MODE

Width :

8.7mm

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 4.5V

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 100A, 10V

ECCN Code :

EAR99

Power Dissipation-Max :

250W Ta

Number of Elements :

1

Case Connection :

DRAIN

Base Part Number :

CSD18510

Additional Feature :

AVALANCHE RATED

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

Non-RoHS Compliant

Transistor Application :

SWITCHING

Number of Terminations :

3

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

11400pF @ 20V

Pbfree Code :

yes

Element Configuration :

Single

Package / Case :

TO-220-3

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.0026Ohm

JEDEC-95 Code :

TO-220AB

Length :

10.16mm

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

JESD-609 Code :

e3

Thickness :

4.58mm

Current - Continuous Drain (Id) @ 25°C :

200A Ta

Feedback Cap-Max (Crss) :

551 pF

Height :

4.7mm

Terminal Finish :

Matte Tin (Sn)

DS Breakdown Voltage-Min :

40V

Vgs (Max) :

±20V

Number of Pins :

3

Mounting Type :

Through Hole