CSD18510KCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Mounting Type :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 4.5V

Power Dissipation-Max :

250W Ta

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED

Feedback Cap-Max (Crss) :

551 pF

FET Type :

N-Channel

Transistor Application :

SWITCHING

Base Part Number :

CSD18510

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 100A, 10V

JESD-609 Code :

e3

Number of Pins :

3

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

Non-RoHS Compliant

Drain-source On Resistance-Max :

0.0026Ohm

Input Capacitance (Ciss) (Max) @ Vds :

11400pF @ 20V

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Transistor Element Material :

SILICON

Height :

4.7mm

JEDEC-95 Code :

TO-220AB

DS Breakdown Voltage-Min :

40V

Series :

NexFET™

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

400A

Reach Compliance Code :

not_compliant

Current - Continuous Drain (Id) @ 25°C :

200A Ta

Drain Current-Max (Abs) (ID) :

200A

Factory Lead Time :

6 Weeks

Length :

10.16mm

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

40V

Number of Elements :

1

Thickness :

4.58mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Surface Mount :

No

Number of Terminations :

3

Pbfree Code :

yes

Element Configuration :

Single

Package / Case :

TO-220-3

Width :

8.7mm