CSD18509Q5B

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Reach Compliance Code :

not_compliant

Package / Case :

8-PowerTDFN

Number of Channels :

1

Turn On Delay Time :

9 ns

Series :

NexFET™

Power Dissipation-Max :

3.1W Ta 195W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

57 ns

Mount :

Surface Mount

Length :

5mm

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

40V

Terminal Form :

NO LEAD

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Input Capacitance (Ciss) (Max) @ Vds :

13900pF @ 20V

Power Dissipation :

3.1W

Feedback Cap-Max (Crss) :

354 pF

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

1.2m Ω @ 32A, 10V

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

400A

Element Configuration :

Single

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

195nC @ 10V

Avalanche Energy Rating (Eas) :

345 mJ

Gate to Source Voltage (Vgs) :

20V

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Max Junction Temperature (Tj) :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.2V @ 250µA

FET Type :

N-Channel

Base Part Number :

CSD18509

Fall Time (Typ) :

11 ns

Rise Time :

19ns

Height :

1.05mm

Factory Lead Time :

8 Weeks

Contact Plating :

Gold

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Terminal Position :

Dual

Number of Terminations :

5

Thickness :

950μm

Width :

6mm

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Lead Free :

Contains Lead

Continuous Drain Current (ID) :

38A