CSD18509Q5B

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Mount :

Surface Mount

Power Dissipation-Max :

3.1W Ta 195W Tc

Terminal Form :

NO LEAD

Max Junction Temperature (Tj) :

150°C

Number of Channels :

1

Reach Compliance Code :

not_compliant

Contact Plating :

Gold

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Factory Lead Time :

8 Weeks

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

40V

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

195nC @ 10V

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Feedback Cap-Max (Crss) :

354 pF

Turn-Off Delay Time :

57 ns

Number of Terminations :

5

Series :

NexFET™

Fall Time (Typ) :

11 ns

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

345 mJ

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

13900pF @ 20V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Width :

6mm

Lead Free :

Contains Lead

Rise Time :

19ns

JESD-609 Code :

e3

Package / Case :

8-PowerTDFN

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

38A

Height :

1.05mm

Turn On Delay Time :

9 ns

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Base Part Number :

CSD18509

Transistor Application :

SWITCHING

Power Dissipation :

3.1W

Length :

5mm

Thickness :

950μm

Rds On (Max) @ Id, Vgs :

1.2m Ω @ 32A, 10V

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

400A

Number of Pins :

8