CSD18504Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

1.1mm

Package / Case :

8-PowerTDFN

REACH SVHC :

No SVHC

Base Part Number :

CSD18504

Input Capacitance (Ciss) (Max) @ Vds :

1656pF @ 20V

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Number of Pins :

8

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

6.6m Ω @ 17A, 10V

Rise Time :

6.8ns

Transistor Element Material :

SILICON

Contact Plating :

Tin

Width :

6mm

Radiation Hardening :

No

Number of Channels :

1

Element Configuration :

Single

Packaging :

Cut Tape (CT)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Turn-Off Delay Time :

12 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

15A

Number of Terminations :

5

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Threshold Voltage :

1.9V

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Thickness :

1mm

Series :

NexFET™

Power Dissipation :

3.1W

Length :

4.9mm

Pulsed Drain Current-Max (IDM) :

275A

Terminal Position :

Dual

Avalanche Energy Rating (Eas) :

92 mJ

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

50A

Feedback Cap-Max (Crss) :

9.6 pF

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

2 ns

Transistor Application :

SWITCHING

Max Junction Temperature (Tj) :

150°C

Factory Lead Time :

8 Weeks

Turn On Delay Time :

3.2 ns

Drain to Source Breakdown Voltage :

40V

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Current - Continuous Drain (Id) @ 25°C :

15A Ta 50A Tc

Power Dissipation-Max :

3.1W Ta 77W Tc