CSD18504KCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

115W Tc

Turn On Delay Time :

4.4 ns

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

85A

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Packaging :

Tube

JESD-609 Code :

e3

Threshold Voltage :

1.9V

Rise Time :

5.2ns

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

88 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

93W

Width :

8.7mm

Pbfree Code :

yes

Length :

10.16mm

Number of Terminations :

3

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 20V

Lead Free :

Lead Free

Mount :

Through Hole

Number of Elements :

1

Drain to Source Breakdown Voltage :

40V

Package / Case :

TO-220-3

Radiation Hardening :

No

FET Type :

N-Channel

Height :

4.7mm

Case Connection :

DRAIN

Thickness :

4.58mm

Fall Time (Typ) :

4.2 ns

Mounting Type :

Through Hole

Element Configuration :

Single

Base Part Number :

CSD18504

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

53A Ta 100A Tc

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Series :

NexFET™

Rds On (Max) @ Id, Vgs :

7m Ω @ 40A, 10V

Factory Lead Time :

6 Weeks

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Terminal Finish :

Matte Tin (Sn)

Turn-Off Delay Time :

11.2 ns