CSD18503Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0062Ohm

Packaging :

Cut Tape (CT)

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Base Part Number :

CSD18503

Rise Time :

8.8ns

Length :

4.9mm

Height :

1.1mm

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

40V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

2640pF @ 20V

Threshold Voltage :

1.8V

Width :

6mm

Max Junction Temperature (Tj) :

150°C

Mount :

Surface Mount

ECCN Code :

EAR99

Package / Case :

8-PowerTDFN

Current - Continuous Drain (Id) @ 25°C :

19A Ta 100A Tc

Element Configuration :

Single

Turn On Delay Time :

4.5 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

15 ns

Number of Terminations :

5

Series :

NexFET™

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Continuous Drain Current (ID) :

19A

Pbfree Code :

yes

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

4.3m Ω @ 22A, 10V

Factory Lead Time :

16 Weeks

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Power Dissipation-Max :

3.1W Ta 120W Tc

Number of Elements :

1

Terminal Position :

Dual

Fall Time (Typ) :

2.6 ns

Number of Channels :

1

Power Dissipation :

3.1W

Contact Plating :

Tin

JESD-609 Code :

e3

Radiation Hardening :

No

Vgs (Max) :

±20V

Thickness :

1mm

Vgs(th) (Max) @ Id :

2.3V @ 250μA