CSD18503KCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

3150pF @ 20V

Series :

NexFET™

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

188W Tc

Packaging :

Tube

Element Configuration :

Single

Pbfree Code :

yes

Base Part Number :

CSD18503

FET Type :

N-Channel

Width :

8.7mm

Number of Pins :

3

Length :

10.16mm

Number of Elements :

1

Turn-Off Delay Time :

14 ns

Factory Lead Time :

6 Weeks

Mounting Type :

Through Hole

Height :

4.7mm

Continuous Drain Current (ID) :

100A

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Power Dissipation :

143W

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

40V

Number of Terminations :

3

Turn On Delay Time :

5.7 ns

Drain-source On Resistance-Max :

0.0068Ohm

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 75A, 10V

Transistor Application :

SWITCHING

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Thickness :

4.58mm

Package / Case :

TO-220-3

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Lead Free :

Lead Free

Fall Time (Typ) :

6.8 ns

Vgs (Max) :

±20V

Rise Time :

5.3ns

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Mount :

Through Hole

JESD-609 Code :

e3