CSD18502KCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Height :

4.7mm

ECCN Code :

EAR99

Length :

10.16mm

REACH SVHC :

No SVHC

Package / Case :

TO-220-3

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

40V

Input Capacitance (Ciss) (Max) @ Vds :

4680pF @ 20V

Turn On Delay Time :

11 ns

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Series :

NexFET™

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

40V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Rise Time :

7.3ns

Pulsed Drain Current-Max (IDM) :

400A

Base Part Number :

CSD18502

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Nominal Vgs :

1.8 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

100A

Power Dissipation-Max :

259W Tc

Lead Free :

Lead Free

Fall Time (Typ) :

9.3 ns

Feedback Cap-Max (Crss) :

26 pF

Number of Pins :

3

Threshold Voltage :

1.8V

Vgs (Max) :

±20V

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

FET Type :

N-Channel

RoHS Status :

Non-RoHS Compliant

Mount :

Through Hole

Width :

8.7mm

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

2.9m Ω @ 100A, 10V

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Factory Lead Time :

12 Weeks

Contact Plating :

Tin

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Thickness :

4.58mm

Turn-Off Delay Time :

33 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

216W

Reach Compliance Code :

not_compliant