CSD18502KCS

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

40V

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

2.9m Ω @ 100A, 10V

Base Part Number :

CSD18502

JESD-609 Code :

e3

Element Configuration :

Single

Feedback Cap-Max (Crss) :

26 pF

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

4680pF @ 20V

Mounting Type :

Through Hole

Factory Lead Time :

12 Weeks

Threshold Voltage :

1.8V

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

Non-RoHS Compliant

Mount :

Through Hole

Thickness :

4.58mm

Power Dissipation-Max :

259W Tc

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Series :

NexFET™

Fall Time (Typ) :

9.3 ns

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Reach Compliance Code :

not_compliant

Turn On Delay Time :

11 ns

Power Dissipation :

216W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn-Off Delay Time :

33 ns

Nominal Vgs :

1.8 V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

400A

Width :

8.7mm

Number of Terminations :

3

Case Connection :

DRAIN

Number of Elements :

1

DS Breakdown Voltage-Min :

40V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Length :

10.16mm

Package / Case :

TO-220-3

Number of Pins :

3

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Continuous Drain Current (ID) :

100A

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Rise Time :

7.3ns

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Height :

4.7mm