CSD17581Q3A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

30V

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 16A, 10V

Width :

3.3mm

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

154A

Feedback Cap-Max (Crss) :

195 pF

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Series :

NexFET™

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Flat

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

3640pF @ 15V

Avalanche Energy Rating (Eas) :

76 mJ

Number of Pins :

8

Pbfree Code :

yes

JESD-609 Code :

e3

Base Part Number :

CSD17581

Power Dissipation-Max :

2.8W Ta 63W Tc

Current - Continuous Drain (Id) @ 25°C :

21A Ta

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Thickness :

800μm

Number of Elements :

1

Factory Lead Time :

6 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0047Ohm

Case Connection :

DRAIN

Number of Terminations :

5

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

30V

Lead Free :

Lead Free

Vgs (Max) :

±20V

Package / Case :

8-PowerVDFN

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1.7V @ 250μA

Surface Mount :

yes

Element Configuration :

Single

Length :

3.3mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain Current-Max (Abs) (ID) :

21A