CSD17579Q3AT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

30V

Length :

3.3mm

FET Type :

N-Channel

Package / Case :

8-PowerVDFN

Vgs (Max) :

±20V

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

998pF @ 15V

Gate to Source Voltage (Vgs) :

20V

Thickness :

800μm

Rise Time :

5ns

Number of Terminations :

5

Transistor Application :

SWITCHING

Element Configuration :

Single

Continuous Drain Current (ID) :

20A

Fall Time (Typ) :

1 ns

Drain-source On Resistance-Max :

0.0142Ohm

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Drain Current-Max (Abs) (ID) :

11A

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Terminal Form :

Flat

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Base Part Number :

CSD17579

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

106A

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Terminal Position :

Dual

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

Power Dissipation-Max :

3.2W Ta 29W Tc

Mount :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

10.2m Ω @ 8A, 10V

Turn On Delay Time :

2 ns

Turn-Off Delay Time :

11 ns

Factory Lead Time :

6 Weeks

Vgs(th) (Max) @ Id :

1.9V @ 250μA

DS Breakdown Voltage-Min :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Width :

3.3mm

Feedback Cap-Max (Crss) :

49 pF

Contact Plating :

Tin

Avalanche Energy Rating (Eas) :

14 mJ

Series :

NexFET™