CSD17576Q5B
- Mfr.Part #
- CSD17576Q5B
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 100A 8VSON
- Stock
- 3,055
- In Stock :
- 3,055
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Length :
- 5mm
- Current - Continuous Drain (Id) @ 25°C :
- 100A Ta
- Base Part Number :
- CSD17576
- Power Dissipation-Max :
- 3.1W Ta 125W Tc
- Rds On (Max) @ Id, Vgs :
- 2m Ω @ 25A, 10V
- JESD-609 Code :
- e4
- Drain to Source Voltage (Vdss) :
- 30V
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- Width :
- 6mm
- Turn-Off Delay Time :
- 23 ns
- Vgs (Max) :
- ±20V
- Mount :
- Surface Mount
- Factory Lead Time :
- 8 Weeks
- Contact Plating :
- Gold
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 5
- Vgs(th) (Max) @ Id :
- 1.8V @ 250μA
- Rise Time :
- 16ns
- Number of Elements :
- 1
- Reach Compliance Code :
- not_compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Continuous Drain Current (ID) :
- 100A
- Lead Free :
- Contains Lead
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- 260
- Additional Feature :
- AVALANCHE RATED
- Turn On Delay Time :
- 5 ns
- FET Type :
- N-Channel
- Drain Current-Max (Abs) (ID) :
- 30A
- Number of Pins :
- 8
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Thickness :
- 950μm
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 68nC @ 10V
- Fall Time (Typ) :
- 3 ns
- DS Breakdown Voltage-Min :
- 30V
- Terminal Position :
- Dual
- Drain-source On Resistance-Max :
- 0.0029Ohm
- Pbfree Code :
- yes
- Pulsed Drain Current-Max (IDM) :
- 400A
- Terminal Form :
- NO LEAD
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 4430pF @ 15V
- Transistor Element Material :
- SILICON
- Package / Case :
- 8-PowerTDFN
- Series :
- NexFET™
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 3.1W
- Datasheets
- CSD17576Q5B

N-Channel Tape & Reel (TR) 2m Ω @ 25A, 10V ±20V 4430pF @ 15V 68nC @ 10V 30V 8-PowerTDFN
CSD17576Q5B Description
This 30 V, 1.7 mΩ, SON 5 x 6-mm NexFET? power MOSFET has been designed to minimize losses in power conversion applications.
CSD17576Q5B Features
Low Qg and Qgd
Low RDS(on)
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm × 6-mm Plastic Package
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