CSD17570Q5B

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Additional Feature :

AVALANCHE RATED

Mounting Type :

Surface Mount

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

5

Number of Channels :

1

ECCN Code :

EAR99

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

13600pF @ 15V

Factory Lead Time :

8 Weeks

Power Dissipation-Max :

3.2W Ta

Turn-Off Delay Time :

144 ns

Terminal Finish :

Matte Tin (Sn)

Base Part Number :

CSD17570

Length :

5mm

Turn On Delay Time :

5 ns

Pulsed Drain Current-Max (IDM) :

360A

Rds On (Max) @ Id, Vgs :

0.69m Ω @ 50A, 10V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Fall Time (Typ) :

44 ns

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Series :

NexFET™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Terminal Form :

NO LEAD

Lead Free :

Contains Lead

Avalanche Energy Rating (Eas) :

450 mJ

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

30V

Element Configuration :

Single

Vgs (Max) :

±20V

Width :

6mm

Drain-source On Resistance-Max :

0.00092Ohm

Number of Pins :

8

Drain Current-Max (Abs) (ID) :

53A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Surface Mount

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

1.9V @ 250μA

Package / Case :

8-PowerTDFN

Contact Plating :

Gold

Thickness :

950μm

Gate Charge (Qg) (Max) @ Vgs :

121nC @ 4.5V

Rise Time :

36ns

Continuous Drain Current (ID) :

100A

RoHS Status :

ROHS3 Compliant