CSD17559Q5T

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

41ns

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

Number of Pins :

8

Series :

NexFET™

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 4.5V

Element Configuration :

Single

Drain-source On Resistance-Max :

0.0015Ohm

Drain to Source Voltage (Vdss) :

30V

Vgs (Max) :

±20V

Turn On Delay Time :

20 ns

Terminal Form :

NO LEAD

Pulsed Drain Current-Max (IDM) :

400A

Vgs(th) (Max) @ Id :

1.7V @ 250μA

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

3.2W Ta 96W Tc

Feedback Cap-Max (Crss) :

113 pF

DS Breakdown Voltage-Min :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

not_compliant

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

40A

Packaging :

Tape and Reel (TR)

Length :

5mm

Mounting Type :

Surface Mount

Height :

1.05mm

Turn-Off Delay Time :

32 ns

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

257A

Mount :

Surface Mount

Width :

6mm

Thickness :

1mm

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Rds On (Max) @ Id, Vgs :

1.15m Ω @ 40A, 10V

Lead Free :

Contains Lead

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Package / Case :

8-PowerTDFN

Avalanche Energy Rating (Eas) :

541 mJ

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

9200pF @ 15V

Number of Terminations :

5

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Fall Time (Typ) :

14 ns

Base Part Number :

CSD17559

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V