CSD17556Q5B

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

500 mJ

Rise Time :

26ns

Power Dissipation :

3.1W

Operating Temperature :

-55°C~150°C TJ

Width :

6mm

Element Configuration :

Single

Number of Terminations :

5

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

27 ns

Case Connection :

DRAIN

Factory Lead Time :

6 Weeks

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

Lead Free :

Contains Lead

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Height :

1.05mm

Additional Feature :

AVALANCHE RATED

Length :

5mm

JESD-609 Code :

e3

REACH SVHC :

Unknown

Current - Continuous Drain (Id) @ 25°C :

34A Ta 100A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

1.4m Ω @ 40A, 10V

Drain to Source Voltage (Vdss) :

30V

Turn On Delay Time :

14 ns

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

1.65V @ 250μA

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

12 ns

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Threshold Voltage :

1.4V

Thickness :

950μm

Number of Elements :

1

Continuous Drain Current (ID) :

100A

Series :

NexFET™

FET Type :

N-Channel

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

34A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

30V

Transistor Element Material :

SILICON

Power Dissipation-Max :

3.1W Ta 191W Tc

Base Part Number :

CSD17556

Terminal Form :

NO LEAD

Package / Case :

8-PowerTDFN

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 4.5V

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

7020pF @ 15V