CSD17555Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Radiation Hardening :

No

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Contact Plating :

Tin

Lead Free :

Contains Lead

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 4.5V

Gate to Source Voltage (Vgs) :

20V

Length :

4.9mm

Vgs (Max) :

±20V

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0034Ohm

Peak Reflow Temperature (Cel) :

260

Package / Case :

8-PowerTDFN

DS Breakdown Voltage-Min :

30V

Packaging :

Cut Tape (CT)

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Thickness :

1mm

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Number of Terminations :

5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

14 ns

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

4650pF @ 15V

Rds On (Max) @ Id, Vgs :

2.7m Ω @ 25A, 10V

Series :

NexFET™

Rise Time :

18ns

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Continuous Drain Current (ID) :

100A

Width :

6mm

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Terminal Position :

Dual

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1.9V @ 250μA

Power Dissipation-Max :

3W Ta

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

24A Ta 100A Tc

Base Part Number :

CSD17555

ECCN Code :

EAR99

Turn-Off Delay Time :

20 ns

Drain Current-Max (Abs) (ID) :

24A

Power Dissipation :

3W

Fall Time (Typ) :

5.3 ns

Additional Feature :

AVALANCHE RATED