CSD17553Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

NexFET™

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED

Drain-source On Resistance-Max :

0.004ohm

RoHS Status :

ROHS3 Compliant

Power Dissipation :

3.1W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Base Part Number :

CSD17553

Rise Time :

17ns

Lead Free :

Contains Lead

Fall Time (Typ) :

5.2 ns

FET Type :

N-Channel

Case Connection :

DRAIN

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

3252pF @ 15V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Terminal Form :

NO LEAD

Factory Lead Time :

16 Weeks

Gate Charge (Qg) (Max) @ Vgs :

21.5nC @ 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

30V

Current - Continuous Drain (Id) @ 25°C :

23.5A Ta 100A Tc

Vgs(th) (Max) @ Id :

1.9V @ 250μA

Feedback Cap-Max (Crss) :

60 pF

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Terminal Position :

Dual

DS Breakdown Voltage-Min :

30V

Number of Terminations :

5

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

ECCN Code :

EAR99

Turn On Delay Time :

9.7 ns

Terminal Finish :

Matte Tin (Sn)

Package / Case :

8-PowerTDFN

Power Dissipation-Max :

3.1W Ta

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

100A

Element Configuration :

Single

Height :

1.1mm

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Thickness :

1mm

Drain Current-Max (Abs) (ID) :

23.5A

Width :

6mm

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

14.8 ns

Rds On (Max) @ Id, Vgs :

3.1m Ω @ 20A, 10V

Length :

4.9mm