CSD17551Q3A
- Mfr.Part #
- CSD17551Q3A
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 12A 8SON
- Stock
- 6,954
- In Stock :
- 6,954
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 8 ns
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 2.6W Ta
- Threshold Voltage :
- 1.6V
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Base Part Number :
- CSD17551
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 11A, 10V
- Fall Time (Typ) :
- 3.4 ns
- Drain to Source Breakdown Voltage :
- 30V
- Package / Case :
- 8-PowerVDFN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Width :
- 3.3mm
- Gate Charge (Qg) (Max) @ Vgs :
- 7.8nC @ 4.5V
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 8
- Number of Terminations :
- 5
- REACH SVHC :
- Unknown
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Height :
- 900μm
- ECCN Code :
- EAR99
- Factory Lead Time :
- 12 Weeks
- Turn-Off Delay Time :
- 12 ns
- Vgs (Max) :
- ±20V
- Thickness :
- 800μm
- Additional Feature :
- AVALANCHE RATED
- Nominal Vgs :
- 1.6 V
- Vgs(th) (Max) @ Id :
- 2.1V @ 250μA
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 2.6W
- Max Junction Temperature (Tj) :
- 150°C
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Length :
- 3.3mm
- Number of Channels :
- 1
- Series :
- NexFET™
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Terminal Form :
- Flat
- FET Type :
- N-Channel
- Contact Plating :
- Tin
- Continuous Drain Current (ID) :
- 12A
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Peak Reflow Temperature (Cel) :
- 260
- Input Capacitance (Ciss) (Max) @ Vds :
- 1370pF @ 15V
- Rise Time :
- 24ns
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- CSD17551Q3A

N-Channel Tape & Reel (TR) 9m Ω @ 11A, 10V ±20V 1370pF @ 15V 7.8nC @ 4.5V 8-PowerVDFN
CSD17551Q3A Description
CSD17551Q3A is a 30V N channel NexFET? power MOSFET. This 30 V, 7.8 mΩ, 3.3 mm × 3.3 mm NexFET power MOSFET CSD17551Q3A is designed to minimize losses in power conversion applications. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor CSD17551Q3A is in the VSONP-8 package with 2.6W power dissipation.
CSD17551Q3A Features
-
Ultra-Low Qg and Qgd
-
Low Thermal Resistance
-
Avalanche Rated
-
Pb Free
-
RoHS Compliant
-
Halogen Free
-
SON 3.3 mm × 3.3 mm Plastic Package
CSD17551Q3A Applications
-
Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems
-
Optimized for Control FET Applications
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