CSD17527Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Power Dissipation :

3W

Power Dissipation-Max :

3W Ta

Transistor Application :

SWITCHING

Turn-Off Delay Time :

9.8 ns

Gate Charge (Qg) (Max) @ Vgs :

3.4nC @ 4.5V

Width :

6mm

Package / Case :

8-PowerTDFN

Contact Plating :

Tin

Drain to Source Breakdown Voltage :

30V

Packaging :

Cut Tape (CT)

Case Connection :

DRAIN

ECCN Code :

EAR99

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Factory Lead Time :

6 Weeks

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

65A

Pbfree Code :

yes

Pin Count :

8

Peak Reflow Temperature (Cel) :

260

Feedback Cap-Max (Crss) :

33 pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

NexFET™

Input Capacitance (Ciss) (Max) @ Vds :

506pF @ 15V

Fall Time (Typ) :

3.2 ns

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 250μA

Gate to Source Voltage (Vgs) :

20V

Length :

4.9mm

Number of Pins :

8

Number of Elements :

1

Thickness :

1mm

Base Part Number :

CSD17527

Additional Feature :

AVALANCHE RATED

JESD-30 Code :

R-PDSO-F5

Number of Terminations :

5

Terminal Form :

Flat

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

65A Tc

Avalanche Energy Rating (Eas) :

45 mJ

Mount :

Surface Mount

Element Configuration :

Single

Terminal Position :

Dual

Turn On Delay Time :

5.6 ns

Radiation Hardening :

No

Rise Time :

8.2ns

Rds On (Max) @ Id, Vgs :

10.8m Ω @ 11A, 10V

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V