CSD17510Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Base Part Number :

CSD17510

Thickness :

1mm

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

4.1 ns

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

30V

Lead Free :

Contains Lead

Length :

4.9mm

Radiation Hardening :

No

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

7 ns

Feedback Cap-Max (Crss) :

66 pF

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

5.2m Ω @ 20A, 10V

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Turn-Off Delay Time :

9 ns

Number of Elements :

1

Additional Feature :

AVALANCHE RATED

Contact Plating :

Tin

Package / Case :

8-PowerTDFN

Peak Reflow Temperature (Cel) :

260

Avalanche Energy Rating (Eas) :

45 mJ

Series :

NexFET™

Number of Pins :

8

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Element Configuration :

Single

Continuous Drain Current (ID) :

20A

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 15V

Height :

1.1mm

Case Connection :

DRAIN

Number of Terminations :

5

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Pbfree Code :

yes

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 4.5V

Nominal Vgs :

1.5 V

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Pin Count :

8

Factory Lead Time :

6 Weeks

JESD-609 Code :

e3

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

3W Ta

Power Dissipation :

3W

Threshold Voltage :

1.5V

Width :

6mm

Rise Time :

11ns

Drain-source On Resistance-Max :

0.0073Ohm

Current - Continuous Drain (Id) @ 25°C :

20A Ta 100A Tc