CSD17506Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

4.9mm

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

1.3V

Series :

NexFET™

Avalanche Energy Rating (Eas) :

259 mJ

Nominal Vgs :

1.3 V

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Drain-source On Resistance-Max :

0.0053Ohm

Feedback Cap-Max (Crss) :

65 pF

Element Configuration :

Single

Radiation Hardening :

No

Package / Case :

8-PowerTDFN

Turn-Off Delay Time :

13 ns

Power Dissipation :

3.2W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Height :

1.1mm

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Terminal Position :

Dual

Lead Free :

Contains Lead

Mounting Type :

Surface Mount

Fall Time (Typ) :

5.3 ns

Turn On Delay Time :

7.5 ns

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

1650pF @ 15V

Continuous Drain Current (ID) :

100A

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

23A

Factory Lead Time :

12 Weeks

Pin Count :

8

Thickness :

1mm

Number of Terminations :

5

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Pbfree Code :

yes

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Rise Time :

13ns

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Current - Continuous Drain (Id) @ 25°C :

100A Tc

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Width :

6mm

Rds On (Max) @ Id, Vgs :

4m Ω @ 20A, 10V

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Drain to Source Breakdown Voltage :

30V

Power Dissipation-Max :

3.2W Ta

Base Part Number :

CSD17506

Mount :

Surface Mount