CSD17505Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

11.5ns

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Turn-Off Delay Time :

15 ns

Width :

6mm

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

24A

Turn On Delay Time :

8.3 ns

Additional Feature :

AVALANCHE RATED

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

Non-RoHS Compliant

Case Connection :

DRAIN

Power Dissipation :

3.2W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

NexFET™

Drain to Source Breakdown Voltage :

30V

Base Part Number :

CSD17505

Operating Temperature :

-55°C~150°C TJ

Contact Plating :

Tin

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Threshold Voltage :

1.3V

Current - Continuous Drain (Id) @ 25°C :

24A Ta 100A Tc

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 20A, 10V

Number of Pins :

8

Package / Case :

8-PowerTDFN

Lead Free :

Contains Lead

Drain-source On Resistance-Max :

0.0046Ohm

ECCN Code :

EAR99

Element Configuration :

Single

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

6.1 ns

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 4.5V

Radiation Hardening :

No

Pin Count :

8

Number of Terminations :

5

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

1980pF @ 15V

Continuous Drain Current (ID) :

100A

Terminal Position :

Dual

Nominal Vgs :

1.3 V

Height :

1.1mm

FET Type :

N-Channel

Factory Lead Time :

16 Weeks

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Thickness :

1mm

Length :

4.9mm

Avalanche Energy Rating (Eas) :

290 mJ

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Power Dissipation-Max :

3.2W Ta

Mounting Type :

Surface Mount