CSD17501Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Drain-source On Resistance-Max :

0.0037Ohm

Power Dissipation-Max :

3.2W Ta

Rds On (Max) @ Id, Vgs :

2.9m Ω @ 25A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lead Free :

Contains Lead

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Thickness :

1mm

Factory Lead Time :

16 Weeks

Base Part Number :

CSD17501

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Width :

6mm

Vgs (Max) :

±20V

Turn On Delay Time :

10.4 ns

Fall Time (Typ) :

7.9 ns

Case Connection :

DRAIN

Power Dissipation :

3.2W

Current - Continuous Drain (Id) @ 25°C :

100A Tc

ECCN Code :

EAR99

Number of Elements :

1

Continuous Drain Current (ID) :

100A

Drain to Source Breakdown Voltage :

30V

Series :

NexFET™

Mount :

Surface Mount

Pbfree Code :

yes

Turn-Off Delay Time :

18 ns

Contact Plating :

Tin

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

2630pF @ 15V

Length :

4.9mm

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

8

Transistor Element Material :

SILICON

Pin Count :

8

Avalanche Energy Rating (Eas) :

405 mJ

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

5

Radiation Hardening :

No

Rise Time :

17ns

FET Type :

N-Channel

Package / Case :

8-PowerTDFN