CSD17484F4T
- Mfr.Part #
- CSD17484F4T
- Manufacturer
- Texas Instruments
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 3A 3PICOSTAR
- Stock
- 18,435
- In Stock :
- 18,435
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 8V
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Feedback Cap-Max (Crss) :
- 2.9 pF
- Base Part Number :
- CSD17484
- Drain-source On Resistance-Max :
- 0.27Ohm
- Thickness :
- 200μm
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 16 Weeks
- Terminal Position :
- BOTTOM
- Turn-Off Delay Time :
- 11 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 195pF @ 15V
- Power Dissipation-Max :
- 500mW Ta
- Length :
- 1.035mm
- Number of Pins :
- 3
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Pin Count :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 3A Ta
- Series :
- FemtoFET™
- Terminal Form :
- NO LEAD
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 1.1V @ 250μA
- Continuous Drain Current (ID) :
- 3A
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 3 ns
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 12V
- Width :
- 635μm
- Rds On (Max) @ Id, Vgs :
- 121m Ω @ 500mA, 8V
- Transistor Element Material :
- SILICON
- Drain Current-Max (Abs) (ID) :
- 3A
- Gate Charge (Qg) (Max) @ Vgs :
- 0.2nC @ 8V
- Fall Time (Typ) :
- 4 ns
- Drain to Source Voltage (Vdss) :
- 30V
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Package / Case :
- 3-XFDFN
- Rise Time :
- 1ns
- Datasheets
- CSD17484F4T

N-Channel Tape & Reel (TR) 121m Ω @ 500mA, 8V 195pF @ 15V 0.2nC @ 8V 30V 3-XFDFN
CSD17484F4T Description
CSD17484F4T is an N-channel Power MOSFET transistor from the manufacturer Texas Instrument with a voltage of 30V. This 99 mΩ, 30 V N-Channel FemtoFET? MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
CSD17484F4T Features
-
Low On-Resistance
-
Ultra-Low Qg and Qgd
-
Low Threshold Voltage
-
Ultra-Small Footprint (0402 Case Size)
-
Lead and Halogen Free
CSD17484F4T Applications
-
Optimized for Load Switch Applications
-
Optimized for General Purpose Switching Application
-
Battery Applications
-
Handheld and Mobile Applications
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