CSD17327Q5A
- Mfr.Part #
- CSD17327Q5A
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 65A 8VSON
- Stock
- 28,309
- In Stock :
- 28,309
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Form :
- NO LEAD
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 30V
- Additional Feature :
- AVALANCHE RATED
- Package / Case :
- 8-PowerTDFN
- Pin Count :
- 8
- Number of Elements :
- 1
- Element Configuration :
- Single
- Thickness :
- 1mm
- Power Dissipation-Max :
- 3W Ta
- Length :
- 4.9mm
- Packaging :
- Cut Tape (CT)
- Vgs (Max) :
- ±10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Base Part Number :
- CSD17327
- Continuous Drain Current (ID) :
- 65A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 5
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 45 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 506pF @ 15V
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 3.4nC @ 4.5V
- Terminal Position :
- Dual
- Current - Continuous Drain (Id) @ 25°C :
- 65A Tc
- Feedback Cap-Max (Crss) :
- 33 pF
- Mount :
- Surface Mount
- Power Dissipation :
- 3W
- Gate to Source Voltage (Vgs) :
- 10V
- Number of Pins :
- 8
- Rds On (Max) @ Id, Vgs :
- 12.2m Ω @ 11A, 8V
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Width :
- 6mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 8V
- Peak Reflow Temperature (Cel) :
- 260
- Series :
- NexFET™
- Lead Free :
- Contains Lead
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Surface Mount
- Datasheets
- CSD17327Q5A

N-Channel Cut Tape (CT) 12.2m Ω @ 11A, 8V ±10V 506pF @ 15V 3.4nC @ 4.5V 8-PowerTDFN
CSD17327Q5A Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 45 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 506pF @ 15V.This device conducts a continuous drain current (ID) of 65A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 8V volts (4.5V 8V).
CSD17327Q5A Features
the avalanche energy rating (Eas) is 45 mJ
a continuous drain current (ID) of 65A
a drain-to-source breakdown voltage of 30V voltage
CSD17327Q5A Applications
There are a lot of Texas Instruments
CSD17327Q5A applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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