CSD17322Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

4.9mm

Mounting Type :

Surface Mount

Rise Time :

12ns

Mount :

Surface Mount

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.0124Ohm

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

10V

Pin Count :

8

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

4.3nC @ 4.5V

Drain to Source Breakdown Voltage :

30V

Fall Time (Typ) :

3.7 ns

Feedback Cap-Max (Crss) :

44 pF

Pbfree Code :

yes

Lead Free :

Contains Lead

Number of Elements :

1

Additional Feature :

AVALANCHE RATED

Turn On Delay Time :

6.7 ns

Number of Terminations :

5

Package / Case :

8-PowerTDFN

Terminal Position :

Dual

Factory Lead Time :

6 Weeks

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2V @ 250μA

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

104A

Width :

6mm

Continuous Drain Current (ID) :

87A

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

695pF @ 15V

Base Part Number :

CSD17322

Power Dissipation-Max :

3W Ta

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Avalanche Energy Rating (Eas) :

54 mJ

Turn-Off Delay Time :

10.5 ns

RoHS Status :

ROHS3 Compliant

Terminal Form :

NO LEAD

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

87A Tc

Vgs (Max) :

±10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 8V

Element Configuration :

Single

Packaging :

Cut Tape (CT)

Rds On (Max) @ Id, Vgs :

8.8m Ω @ 14A, 8V

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

3W

Series :

NexFET™

Thickness :

1mm