CSD17318Q2T

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e4

Terminal Form :

NO LEAD

Power Dissipation-Max :

16W Tc

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

Length :

2mm

Feedback Cap-Max (Crss) :

51 pF

Package / Case :

6-WDFN Exposed Pad

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Width :

2mm

Vgs (Max) :

±10V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Factory Lead Time :

6 Weeks

Rds On (Max) @ Id, Vgs :

15.1m Ω @ 8A, 8V

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Transistor Application :

SWITCHING

Series :

NexFET™

Mounting Type :

Surface Mount

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 8V

Drain Current-Max (Abs) (ID) :

10A

DS Breakdown Voltage-Min :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Base Part Number :

CSD17318

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Number of Pins :

6

Number of Terminations :

6

Drain-source On Resistance-Max :

0.03Ohm

Avalanche Energy Rating (Eas) :

7.7 mJ

Surface Mount :

yes

Thickness :

750μm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

879pF @ 15V

Drain to Source Voltage (Vdss) :

30V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED