CSD17313Q2T
- Mfr.Part #
- CSD17313Q2T
- Manufacturer
- Texas Instruments
- Package / Case
- 6-WDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 5A 6WSON
- Stock
- 270
- In Stock :
- 270
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Dual
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Mounting Type :
- Surface Mount
- Number of Pins :
- 6
- Pulsed Drain Current-Max (IDM) :
- 57A
- Continuous Drain Current (ID) :
- 5A
- Vgs (Max) :
- +10V, -8V
- Gate Charge (Qg) (Max) @ Vgs :
- 2.7nC @ 4.5V
- REACH SVHC :
- No SVHC
- Drain-source On Resistance-Max :
- 0.042Ohm
- JESD-609 Code :
- e4
- Vgs(th) (Max) @ Id :
- 1.8V @ 250μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 340pF @ 15V
- Factory Lead Time :
- 6 Weeks
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 30V
- Series :
- NexFET™
- Number of Terminations :
- 6
- Current - Continuous Drain (Id) @ 25°C :
- 5A Ta
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Drain Current-Max (Abs) (ID) :
- 5A
- Base Part Number :
- CSD17313
- Feedback Cap-Max (Crss) :
- 17 pF
- Package / Case :
- 6-WDFN Exposed Pad
- Rds On (Max) @ Id, Vgs :
- 30m Ω @ 4A, 8V
- Width :
- 2mm
- Thickness :
- 750μm
- Avalanche Energy Rating (Eas) :
- 18 mJ
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 3V 8V
- DS Breakdown Voltage-Min :
- 30V
- Threshold Voltage :
- 1.3V
- Length :
- 2mm
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 2.4W Ta 17W Tc
- Terminal Form :
- NO LEAD
- Datasheets
- CSD17313Q2T

N-Channel Tape & Reel (TR) 30m Ω @ 4A, 8V +10V, -8V 340pF @ 15V 2.7nC @ 4.5V 30V 6-WDFN Exposed Pad
CSD17313Q2T Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 18 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 340pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 5A.5A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 57A, which is its maximum pulsed drain current.1.3V is the threshold voltage at which an electrical device activates any of its operations.To maintain normal operation, the DS breakdown voltage should be kept above 30V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (3V 8V) reduces this device's overall power consumption.
CSD17313Q2T Features
the avalanche energy rating (Eas) is 18 mJ
a continuous drain current (ID) of 5A
based on its rated peak drain current 57A.
a threshold voltage of 1.3V
a 30V drain to source voltage (Vdss)
CSD17313Q2T Applications
There are a lot of Texas Instruments
CSD17313Q2T applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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