CSD17311Q5

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

32A Ta 100A Tc

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

1.6V @ 250μA

Drain to Source Voltage (Vdss) :

30V

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Width :

6mm

Additional Feature :

AVALANCHE RATED

Fall Time (Typ) :

12 ns

Transistor Application :

SWITCHING

Number of Terminations :

5

Length :

5mm

Turn On Delay Time :

12 ns

Pulsed Drain Current-Max (IDM) :

200A

RoHS Status :

ROHS3 Compliant

Rise Time :

18ns

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

2m Ω @ 30A, 8V

Power Dissipation-Max :

3.2W Ta

Package / Case :

8-PowerTDFN

Series :

NexFET™

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Base Part Number :

CSD17311

Thickness :

1mm

Vgs (Max) :

+10V, -8V

Factory Lead Time :

12 Weeks

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Pin Count :

8

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 4.5V

Contact Plating :

Tin

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

1.2V

Continuous Drain Current (ID) :

32A

Drive Voltage (Max Rds On,Min Rds On) :

3V 8V

Pbfree Code :

yes

Power Dissipation :

3.2W

DS Breakdown Voltage-Min :

30V

Element Configuration :

Single

Number of Elements :

1

Turn-Off Delay Time :

33 ns

Number of Pins :

8

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

10V

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Mount :

Surface Mount

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

4280pF @ 15V

Height :

1.05mm