CSD17310Q5A
- Mfr.Part #
- CSD17310Q5A
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 21A/100A 8VSON
- Stock
- 1,000
- In Stock :
- 1,000
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 6.5 ns
- Width :
- 6mm
- Case Connection :
- DRAIN
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 15 ns
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 21A Ta 100A Tc
- Series :
- NexFET™
- Number of Pins :
- 8
- Drain to Source Breakdown Voltage :
- 30V
- Feedback Cap-Max (Crss) :
- 77 pF
- Mounting Type :
- Surface Mount
- Package / Case :
- 8-PowerTDFN
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 11.6nC @ 4.5V
- Transistor Application :
- SWITCHING
- Threshold Voltage :
- 1.3V
- Power Dissipation-Max :
- 3.1W Ta
- Fall Time (Typ) :
- 5 ns
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Additional Feature :
- AVALANCHE RATED
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1560pF @ 15V
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Power Dissipation :
- 3.1W
- Packaging :
- Tape and Reel (TR)
- Thickness :
- 1mm
- Number of Terminations :
- 5
- Rds On (Max) @ Id, Vgs :
- 5.1m Ω @ 20A, 8V
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 1.8V @ 250μA
- Continuous Drain Current (ID) :
- 100A
- Element Configuration :
- Single
- Lead Free :
- Contains Lead
- Drive Voltage (Max Rds On,Min Rds On) :
- 3V 8V
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Vgs (Max) :
- +10V, -8V
- Rise Time :
- 11.5ns
- Nominal Vgs :
- 1.3 V
- Base Part Number :
- CSD17310
- Pin Count :
- 8
- Terminal Position :
- Dual
- Factory Lead Time :
- 16 Weeks
- Length :
- 4.9mm
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Datasheets
- CSD17310Q5A

N-Channel Tape & Reel (TR) 5.1m Ω @ 20A, 8V +10V, -8V 1560pF @ 15V 11.6nC @ 4.5V 8-PowerTDFN
CSD17310Q5A Description
The NexFET? power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
CSD17310Q5A Features
Optimized for 5V Gate Drive
Ultralow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm × 6-mm Plastic Package
CSD17310Q5A Applications
Notebook Point of Load
Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems
Optimized for Synchronous FET Applications
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