CSD17309Q3

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

3V 8V

Mounting Type :

Surface Mount

Lead Free :

Contains Lead

Continuous Drain Current (ID) :

60A

Series :

NexFET™

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

20A Ta 60A Tc

RoHS Status :

ROHS3 Compliant

Height :

1.1mm

Drain Current-Max (Abs) (ID) :

20A

Input Capacitance (Ciss) (Max) @ Vds :

1440pF @ 15V

Pin Count :

8

Element Configuration :

Single

Length :

3.3mm

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Mount :

Surface Mount

REACH SVHC :

No SVHC

Thickness :

1mm

Gate to Source Voltage (Vgs) :

10V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Fall Time (Typ) :

3.6 ns

Package / Case :

8-PowerTDFN

Turn-Off Delay Time :

13.2 ns

Threshold Voltage :

1.2V

Vgs (Max) :

+10V, -8V

Radiation Hardening :

No

Number of Terminations :

5

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Number of Elements :

1

Drain to Source Breakdown Voltage :

30V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Factory Lead Time :

12 Weeks

Nominal Vgs :

1.2 V

Rds On (Max) @ Id, Vgs :

5.4m Ω @ 18A, 8V

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED

Power Dissipation :

2.8W

Rise Time :

9.9ns

Case Connection :

DRAIN

Base Part Number :

CSD17309

Vgs(th) (Max) @ Id :

1.7V @ 250μA

Turn On Delay Time :

6.1 ns

Terminal Position :

Dual

Contact Plating :

Tin

FET Type :

N-Channel

Width :

3.3mm

Power Dissipation-Max :

2.8W Ta

Feedback Cap-Max (Crss) :

56 pF