CSD17308Q3
- Mfr.Part #
- CSD17308Q3
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 14A/44A 8VSON
- Stock
- 1,490
- In Stock :
- 1,490
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Dual
- Max Junction Temperature (Tj) :
- 150°C
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 2.3 ns
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 700pF @ 15V
- Current - Continuous Drain (Id) @ 25°C :
- 14A Ta 44A Tc
- Power Dissipation-Max :
- 2.7W Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Thickness :
- 1mm
- Series :
- NexFET™
- Factory Lead Time :
- 12 Weeks
- Width :
- 3.3mm
- Gate Charge (Qg) (Max) @ Vgs :
- 5.1nC @ 4.5V
- Drain to Source Breakdown Voltage :
- 30V
- Continuous Drain Current (ID) :
- 14A
- Radiation Hardening :
- No
- Avalanche Energy Rating (Eas) :
- 65 mJ
- Vgs (Max) :
- +10V, -8V
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 8
- Turn On Delay Time :
- 4.5 ns
- ECCN Code :
- EAR99
- Nominal Vgs :
- 1.3 V
- Turn-Off Delay Time :
- 9.9 ns
- Package / Case :
- 8-PowerTDFN
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Contact Plating :
- Tin
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 3V 8V
- Feedback Cap-Max (Crss) :
- 35 pF
- Vgs(th) (Max) @ Id :
- 1.8V @ 250μA
- Number of Terminations :
- 5
- Number of Elements :
- 1
- Height :
- 1.1mm
- Rds On (Max) @ Id, Vgs :
- 10.3m Ω @ 10A, 8V
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- AVALANCHE RATED
- Pin Count :
- 8
- Gate to Source Voltage (Vgs) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Lead Free :
- Contains Lead
- Length :
- 3.3mm
- Number of Channels :
- 1
- REACH SVHC :
- No SVHC
- Base Part Number :
- CSD17308
- Power Dissipation :
- 2.7W
- Threshold Voltage :
- 1.3V
- Rise Time :
- 5.7ns
- Drain Current-Max (Abs) (ID) :
- 47A
- Lifecycle Status :
- ACTIVE (Last Updated: 21 hours ago)
- Datasheets
- CSD17308Q3

N-Channel Tape & Reel (TR) 10.3m Ω @ 10A, 8V +10V, -8V 700pF @ 15V 5.1nC @ 4.5V 8-PowerTDFN
CSD17308Q3 Description
The CSD17308Q3 is a low-thermal-resistance 30V N-channel NexFETTM Power MOSFET optimized for 5V gate driving. It is ideal for control or synchronous FET applications and has been engineered to minimize power conversion losses. Suitable for use as a point-of-load synchronous buck converter in networking, telecommunications, and computing systems.
CSD17308Q3 Features
-
Halogen-free
-
Avalanche rated
-
Ultra low Qg and Qgd
-
Optimized for 5V gate drive
CSD17308Q3 Applications
-
Power Management
-
Communications & Networking
-
Computers & Computer Peripherals
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