CSD17307Q5A
- Mfr.Part #
- CSD17307Q5A
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 14A/73A 8VSON
- Stock
- 5,458
- In Stock :
- 5,458
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Turn-Off Delay Time :
- 9.3 ns
- Package / Case :
- 8-PowerTDFN
- Power Dissipation :
- 3W
- ECCN Code :
- EAR99
- Number of Terminations :
- 5
- Fall Time (Typ) :
- 2.6 ns
- Vgs (Max) :
- +10V, -8V
- Factory Lead Time :
- 12 Weeks
- Number of Elements :
- 1
- Threshold Voltage :
- 1.3V
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 73A
- Drain to Source Breakdown Voltage :
- 30V
- Power Dissipation-Max :
- 3W Ta
- Peak Reflow Temperature (Cel) :
- 260
- Additional Feature :
- AVALANCHE RATED
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 10.5m Ω @ 11A, 8V
- Feedback Cap-Max (Crss) :
- 36 pF
- Radiation Hardening :
- No
- Pin Count :
- 8
- Case Connection :
- DRAIN
- Number of Pins :
- 8
- Turn On Delay Time :
- 4.6 ns
- Element Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 54 mJ
- Base Part Number :
- CSD17307
- Input Capacitance (Ciss) (Max) @ Vds :
- 700pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs :
- 5.2nC @ 4.5V
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 6mm
- Rise Time :
- 6.7ns
- Contact Plating :
- Tin
- Height :
- 1.1mm
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 3V 8V
- Packaging :
- Tape and Reel (TR)
- Nominal Vgs :
- 1.3 V
- FET Type :
- N-Channel
- Thickness :
- 1mm
- Length :
- 4.9mm
- Lead Free :
- Contains Lead
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 10V
- Series :
- NexFET™
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 14A Ta 73A Tc
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 1.8V @ 250μA
- Pulsed Drain Current-Max (IDM) :
- 92A
- Drain-source On Resistance-Max :
- 0.0173ohm
- Datasheets
- CSD17307Q5A

N-Channel Tape & Reel (TR) 10.5m Ω @ 11A, 8V +10V, -8V 700pF @ 15V 5.2nC @ 4.5V 8-PowerTDFN
CSD17307Q5A power MOSFET was created to reduce the power conversion losses. CSD17307Q5A MOSFET has been optimized for 5V gate drive applications. CSD17307Q5A IC has the following characteristic: Optimized for 5V Gate Drive, Ultralow Qg and Qgd, Low Thermal Resistance, Avalanche Rated. It is suitable for Notebook Point of Load, Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems.
CSD17307Q5A Features
Optimized for 5V Gate Drive
Ultralow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
CSD17307Q5A Applications
Notebook Point of Load
Point-of-Load Synchronous Buck
Networking
Telecom
Computing Systems
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