CSD17304Q3

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

2.7W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Vgs (Max) :

+10V, -8V

Factory Lead Time :

6 Weeks

Current - Continuous Drain (Id) @ 25°C :

15A Ta 56A Tc

Number of Terminations :

5

Drive Voltage (Max Rds On,Min Rds On) :

3V 8V

Number of Pins :

8

Width :

3.3mm

JESD-609 Code :

e3

Fall Time (Typ) :

3.1 ns

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

955pF @ 15V

Number of Elements :

1

Pin Count :

8

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 17A, 8V

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Thickness :

1mm

Mounting Type :

Surface Mount

Terminal Position :

Dual

Additional Feature :

AVALANCHE RATED

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Radiation Hardening :

No

Base Part Number :

CSD17304

Contact Plating :

Tin

Power Dissipation-Max :

2.7W Ta

Threshold Voltage :

1.3V

Series :

NexFET™

Nominal Vgs :

1.3 V

Pbfree Code :

yes

Length :

3.3mm

Package / Case :

8-PowerTDFN

Mount :

Surface Mount

Turn On Delay Time :

5.1 ns

Continuous Drain Current (ID) :

56A

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

FET Type :

N-Channel

ECCN Code :

EAR99

Lead Free :

Contains Lead

Drain to Source Breakdown Voltage :

30V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

6.6nC @ 4.5V

Turn-Off Delay Time :

10.4 ns

Rise Time :

9.1ns

Gate to Source Voltage (Vgs) :

10V