CSD17303Q5

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

11.4 ns

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

32A Ta 100A Tc

Drain to Source Breakdown Voltage :

30V

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 25A, 8V

Turn-Off Delay Time :

27 ns

Length :

5mm

Case Connection :

DRAIN

Package / Case :

8-PowerTDFN

Contact Plating :

Tin

Series :

NexFET™

Continuous Drain Current (ID) :

100A

RoHS Status :

Non-RoHS Compliant

Drain-source On Resistance-Max :

0.0037Ohm

Power Dissipation-Max :

3.2W Ta

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

10V

Pbfree Code :

yes

Width :

6mm

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Avalanche Energy Rating (Eas) :

530 mJ

Vgs (Max) :

+10V, -8V

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Thickness :

1mm

Vgs(th) (Max) @ Id :

1.6V @ 250μA

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Power Dissipation :

3.2W

Terminal Position :

Dual

Height :

1.05mm

JESD-609 Code :

e3

Pin Count :

8

Rise Time :

16ns

Nominal Vgs :

1.1 V

Radiation Hardening :

No

Lead Free :

Contains Lead

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Transistor Element Material :

SILICON

Number of Terminations :

5

Base Part Number :

CSD17303

Input Capacitance (Ciss) (Max) @ Vds :

3420pF @ 15V

Pulsed Drain Current-Max (IDM) :

200A

Drive Voltage (Max Rds On,Min Rds On) :

3V 8V

Threshold Voltage :

1.1V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

10.4 ns

Factory Lead Time :

6 Weeks

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 4.5V

Number of Pins :

8

Mount :

Surface Mount