CSD16570Q5BT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

400A

Lead Free :

Contains Lead

Drain to Source Breakdown Voltage :

25V

REACH SVHC :

No SVHC

Package / Case :

8-PowerTDFN

Weight :

24.012046mg

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Reach Compliance Code :

not_compliant

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Terminal Form :

NO LEAD

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Turn-Off Delay Time :

156 ns

Fall Time (Typ) :

72 ns

Thickness :

950μm

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

5 ns

Number of Terminations :

5

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Width :

6mm

Rds On (Max) @ Id, Vgs :

0.59m Ω @ 50A, 10V

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Additional Feature :

AVALANCHE RATED

Terminal Position :

Dual

Power Dissipation-Max :

3.2W Ta 195W Tc

Terminal Finish :

Matte Tin (Sn)

Base Part Number :

CSD16570

Rise Time :

43ns

Number of Channels :

1

Length :

5mm

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Number of Elements :

1

Vgs(th) (Max) @ Id :

1.9V @ 250μA

Factory Lead Time :

6 Weeks

Threshold Voltage :

1.5V

Drain Current-Max (Abs) (ID) :

59A

Input Capacitance (Ciss) (Max) @ Vds :

14000pF @ 12V

FET Type :

N-Channel

Series :

NexFET™

Contact Plating :

Gold

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

100A

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)