CSD16570Q5BT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

0.59m Ω @ 50A, 10V

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Additional Feature :

AVALANCHE RATED

Series :

NexFET™

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Pbfree Code :

yes

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

59A

Length :

5mm

Packaging :

Tape and Reel (TR)

Width :

6mm

Case Connection :

DRAIN

Reach Compliance Code :

not_compliant

Factory Lead Time :

6 Weeks

Pulsed Drain Current-Max (IDM) :

400A

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

5 ns

Lead Free :

Contains Lead

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

1.9V @ 250μA

Package / Case :

8-PowerTDFN

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Fall Time (Typ) :

72 ns

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

100A

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Rise Time :

43ns

Element Configuration :

Single

Terminal Finish :

Matte Tin (Sn)

Thickness :

950μm

Weight :

24.012046mg

Base Part Number :

CSD16570

Terminal Position :

Dual

FET Type :

N-Channel

Number of Pins :

8

Vgs (Max) :

±20V

Turn-Off Delay Time :

156 ns

Input Capacitance (Ciss) (Max) @ Vds :

14000pF @ 12V

Terminal Form :

NO LEAD

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

1.5V

Number of Terminations :

5

Contact Plating :

Gold

JESD-609 Code :

e3

Power Dissipation-Max :

3.2W Ta 195W Tc