CSD16556Q5B

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Rise Time :

34ns

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

6180pF @ 15V

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

40A

Continuous Drain Current (ID) :

100A

Rds On (Max) @ Id, Vgs :

1.07m Ω @ 30A, 10V

Lead Free :

Contains Lead

Package / Case :

8-PowerTDFN

Drain to Source Breakdown Voltage :

25V

Length :

5mm

Base Part Number :

CSD16556

Number of Terminations :

5

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

NexFET™

Transistor Element Material :

SILICON

Fall Time (Typ) :

13 ns

Number of Elements :

1

Turn On Delay Time :

17 ns

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 4.5V

Threshold Voltage :

1.4V

Avalanche Energy Rating (Eas) :

530 mJ

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Vgs(th) (Max) @ Id :

1.7V @ 250μA

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

25 ns

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Pulsed Drain Current-Max (IDM) :

249A

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Width :

6mm

Thickness :

950μm

REACH SVHC :

No SVHC

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

3.2W Ta 191W Tc

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Radiation Hardening :

No

Case Connection :

DRAIN

Power Dissipation :

3.2W

Factory Lead Time :

6 Weeks

Packaging :

Tape and Reel (TR)