CSD16415Q5

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Height :

1.05mm

Nominal Vgs :

1.5 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

+16V, -12V

Drain to Source Breakdown Voltage :

25V

Length :

5mm

Number of Terminations :

5

Power Dissipation-Max :

3.2W Ta

Factory Lead Time :

6 Weeks

Additional Feature :

AVALANCHE RATED

Gate to Source Voltage (Vgs) :

16V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

FET Type :

N-Channel

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

16.6 ns

Thickness :

1mm

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1.9V @ 250μA

Turn-Off Delay Time :

20 ns

Transistor Element Material :

SILICON

Power Dissipation :

3.2W

Rise Time :

30ns

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 4.5V

Threshold Voltage :

1.5V

JESD-609 Code :

e3

Base Part Number :

CSD16415

Rds On (Max) @ Id, Vgs :

1.15m Ω @ 40A, 10V

Number of Pins :

8

Width :

6mm

Continuous Drain Current (ID) :

100A

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Fall Time (Typ) :

12.7 ns

Series :

NexFET™

Radiation Hardening :

No

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

200A

REACH SVHC :

No SVHC

Terminal Position :

Dual

Package / Case :

8-PowerTDFN

Mounting Type :

Surface Mount

Element Configuration :

Single

Number of Elements :

1

Avalanche Energy Rating (Eas) :

500 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

4100pF @ 12.5V

Feedback Cap-Max (Crss) :

230 pF