CSD16414Q5

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Base Part Number :

CSD16414

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

18.4 ns

Dual Supply Voltage :

25V

Drain to Source Breakdown Voltage :

25V

Transistor Element Material :

SILICON

FET Type :

N-Channel

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

16V

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Case Connection :

DRAIN

Vgs (Max) :

+16V, -12V

Width :

6mm

Number of Elements :

1

Mounting Type :

Surface Mount

Height :

1.05mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 4.5V

Termination :

SMD/SMT

Terminal Position :

Dual

REACH SVHC :

No SVHC

Power Dissipation-Max :

3.2W Ta

Threshold Voltage :

1.6V

Drain-source On Resistance-Max :

0.0026Ohm

Packaging :

Tape and Reel (TR)

Thickness :

1mm

Drain Current-Max (Abs) (ID) :

34A

Power Dissipation :

3.2W

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Nominal Vgs :

1.6 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Terminations :

5

Additional Feature :

AVALANCHE RATED

Package / Case :

8-PowerTDFN

Input Capacitance (Ciss) (Max) @ Vds :

3650pF @ 12.5V

Series :

NexFET™

ECCN Code :

EAR99

Number of Pins :

8

Fall Time (Typ) :

11.1 ns

Element Configuration :

Single

Turn On Delay Time :

15 ns

Lead Free :

Contains Lead

Factory Lead Time :

6 Weeks

Continuous Drain Current (ID) :

100A

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Rds On (Max) @ Id, Vgs :

1.9m Ω @ 30A, 10V

Length :

5mm

Avalanche Energy Rating (Eas) :

500 mJ

Pin Count :

8

Rise Time :

24ns

Current - Continuous Drain (Id) @ 25°C :

34A Ta 100A Tc

Mount :

Surface Mount