CSD16413Q5A
- Mfr.Part #
- CSD16413Q5A
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 24A/100A 8VSON
- Stock
- 46,272
- In Stock :
- 46,272
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- +16V, -12V
- Number of Elements :
- 1
- Nominal Vgs :
- 1.6 V
- Package / Case :
- 8-PowerTDFN
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 100A
- Termination :
- SMD/SMT
- Power Dissipation :
- 3.1W
- Height :
- 1.1mm
- Factory Lead Time :
- 6 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 16V
- Thickness :
- 1mm
- Drain-source On Resistance-Max :
- 0.0056Ohm
- Transistor Application :
- SWITCHING
- Length :
- 4.9mm
- Current - Continuous Drain (Id) @ 25°C :
- 24A Ta 100A Tc
- Terminal Position :
- Dual
- Drain Current-Max (Abs) (ID) :
- 24A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1780pF @ 12.5V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Threshold Voltage :
- 1.6V
- Rds On (Max) @ Id, Vgs :
- 3.9m Ω @ 24A, 10V
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 15.9ns
- FET Type :
- N-Channel
- Series :
- NexFET™
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 11.7nC @ 4.5V
- Base Part Number :
- CSD16413
- Width :
- 6mm
- Number of Pins :
- 8
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 3.1W Ta
- Additional Feature :
- AVALANCHE RATED
- Pin Count :
- 8
- REACH SVHC :
- No SVHC
- Drain to Source Breakdown Voltage :
- 25V
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Turn On Delay Time :
- 9.1 ns
- Packaging :
- Cut Tape (CT)
- Dual Supply Voltage :
- 25V
- Vgs(th) (Max) @ Id :
- 1.9V @ 250μA
- Case Connection :
- DRAIN
- JESD-609 Code :
- e3
- Number of Terminations :
- 5
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 10.7 ns
- Fall Time (Typ) :
- 5.7 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Lead Free :
- Contains Lead
- Datasheets
- CSD16413Q5A

N-Channel Cut Tape (CT) 3.9m Ω @ 24A, 10V +16V, -12V 1780pF @ 12.5V 11.7nC @ 4.5V 8-PowerTDFN
CSD16413Q5A Description
NexFETM Power MOSFET CSD16413Q5A is designed to minimize loss in power conversion applications.
CSD16413Q5A
FEATURES
Ultra Low Qg and Qgd
·Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
·RoHS Compliant Halogen Free
SON 5mmx6mm Plastic Package
CSD16413Q5A APPLICATIONS
·Point-of-Load Synchronous Buck Converter for Applications in NetworkingTelecom and Computing Systems
·Optimized for Control or Synchronous FET Applications
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